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GlobalFoundries® Inc. (GF®) is one of the world's leading semiconductor manufacturers. GF redefines innovation and semiconductor manufacturing by developing and delivering feature-rich process technology solutions with leading performance in all growth markets. GF offers a unique mix of design, development and manufacturing services. With a talented and diverse team and manufacturing locations in the U.S., Europe and Asia, GF is a trusted technology provider to its global customers. GF employs approximately 13,000 people, including more than 3,000 in Dresden, Germany. 

For more information, visit www.gf.com. 

Phd on dielectric material characterization for 22FDSOI and NVM technologies

The GlobalFoundries Ph.D. program provides Ph.D. students with the unique opportunity to help contributing to cutting-edge research in the field of dielectric materials for advanced semiconductor technologies, with a focus on FDSOI (Fully Depleted Silicon-on-Insulator) and NVM (Non-Volatile Memory). The overall aim is to investigate and establish sophisticated methods to control the quality of high-k dielectric (HfO)/ultrathin SiO2 interfaces, ONO (Oxide-Nitride-Oxide), and SiOx-based tunnel oxides. In collaboration with TU Bergakademie Freiberg, we have developed a method to characterize interface traps in high-k dielectric/SiO2 stacks which provides insights into the energetic position of traps within the band gap and their spatial distribution within the gate stack. The aim is to test the method’s sensitivity by intentionally inducing changes in the gate stack, and evaluate its robustness and suitability for inline monitoring in a high volume manufacturing environment. A second part of the work is related to evaluate conductance and capacitance transient measurements to establish a method to characterize ONO and SiOx-based tunnel oxide properties for a timely inline process control. The extraction of critical dielectric-specific parameters will be carried out in relation to electrical and yield-relevant key parameters.

This position is designed for 3 years. We are looking for a research candidate who would like to take on a coordinating role in the joint project as well as focus their research work in relation to mass production topics. You will organize and coordinate this work independently in close cooperation with the relevant specialist department and TU Freiberg. You will carry out systematic studies to evaluate the repeatability of measurements, analyze and interpret their results in order to gain further insights into the behavior of dielectric stack parameters. You will systematically document the results and summarize them in regular reports. GF supports the publication of scientific results in leading journals and the protection of intellectual property by filing patents.

Your Profile

• You have completed or are finalizing your Master Thesis in Physics, electrical engineering, or a comparable degree.

• You have knowledge of solid-state physics, and in the field of semiconductor devices.

• Knowledge of semiconductor technology and semiconductor manufacturing is an advantage.

• A confident handling of office programs for word processing and presentation is required.

• You have a high degree of independence and flexibility in terms of time to communicate with the global teams.

• You are communicative and enjoy working in a team.

• Good written and spoken English skills round off your profile.

  Start Date Immediately, 3 years contract with 40h/week work time.

Application

Please apply with your complete documents and indicate your possible start date and duration of the job:

• Cover letter

• Curriculum vitae

• Current Certificate of Enrollment

• Up-to-date transcript of records

• Diploma

• Employment references

  Information about our benefits you can find here: https://gf.com/careers/opportunities-in-europe/